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| 型號： | TPS65200YFFR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, BGA36 |
| 封裝： | 2.80 X 2.60 MM, 0.40 MM PITCH, GREEN, DSBGA-36 |
| 文件頁數(shù)： | 58/59頁 |
| 文件大小： | 2424K |
| 代理商： | TPS65200YFFR |
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SLVSA48 – APRIL 2010
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
VBAT = 3.6 V ±5%, TJ = 27C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENT LIMITING
IIN_LIMIT = 100 mA
88
93
98
IIN_LIMIT
Input current limiting threshold
IIN_LIMIT = 500 mA
450
475
500
mA
IIN_LIMIT = 975 mA
875
925
975
VDD REGULATOR
VBUS > VIN(min) or VSYS > VBATMIN,
Internal bias regulator voltage
2
6.5
V
IVDD = 1 mA, CVDD = 1 mF
VDD
VDD output short current limit
30
mA
Voltage from BST pin to SWC pin
During charge or boost operation
6.5
V
BATTERY RECHARGE THRESHOLD
Recharge threshold voltage
Below VOREG
100
130
160
mV
VRCH
VCSOUT decreasing below threshold,
Deglitch time
130
ms
tFALL = 100 ns, 10-mV overdrive
STAT OUTPUT
Low-level output saturation voltage
IO = 10 mA, sink current
0.4
V
VOL(STAT)
High-level leakage current
Voltage on STAT pin is 5 V
1
A
REVERSE PROTECTION COMPARATOR
Reverse protection threshold,
VREV
2.3 V
≤ VCSOUT ≤ VOREG, VBUS falling
0
40
100
mV
VBUS-VCSOUT
Reverse protection exit hysteresis
2.3 V
≤ VCSOUT ≤ VOREG
140
200
260
mV
VREV-EXIT
Deglitch time for VBUS rising above
Rising voltage
30
ms
VREV + VREV_EXIT
VBUS UVLO
VUVLO
IC active threshold voltage
VBUS rising
3.05
3.3
3.55
V
VUVLO_HYS
IC active hysteresis
VBUS falling from above VUVLO
120
150
mV
PWM
fPWM
PWM frequency, charger
3
MHz
Internal top reverse blocking
IIN_LIMIT = 500 mA,
180
MOSFET on-resistance
Measured from VBUS to PMID
Internal top N-channel Switching
RDSON
Measured from PMID to SWC
120
m
Ω
MOSFET on-resistance
Internal bottom N-channel
Measured from SW to PGND
150
MOSFET on-resistance
DMAX
Maximum duty cycle
99.5
%
DMIN
Minimum duty cycle
0
%
Synchronous mode to
Low-side MOSFET
nonsynchronous mode transition
100
mA
cycle-by-cycle current sensing
current threshold(1)
BOOST MODE OPERATION FOR VBUS (OPA_MODE=1, HZ_MODE=0)
2.5 V < VBUS < 4.5 V; Including line and
VBUS_B
Boost output voltage (to pin VBUS)
4.75
5
5.25
V
load regulation over full temp range
IBO
Maximum output current for boost
VBUS_B = 5 V, 2.5 V < VBUS < 4.5 V
200
mA
Cycle by cycle current limit for
IBLIMIT
VBUS_B = 5 V, 2.5 V < VSYS < 4.5 V
1
A
boost
Over voltage protection threshold
Threshold over VBUS to turn off converter
5.8
6
6.2
V
for boost (VBUS pin)
during boost
VBUSOVP
VBUSOVP hysteresis
VBUS falling from above VBUSOVP
200
mV
Maximum battery voltage for boost
VSYS rising edge during boost
4.75
4.9
5.05
V
VBATMAX
VBATMAX hysteresis
VSYS falling from above VBATMAX
200
mV
(1)
Bottom N-channel MOSFET always turns on for ~60 ns and then turns off if current is too low.
8
Copyright 2010, Texas Instruments Incorporated
Product Folder Link(s): TPS65200
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