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參數(shù)資料
| 型號(hào)： | TRCV0110G |
| 英文描述： | ATM/SONET DEMULTIPLEXER|BIPOLAR|BGA|177PIN|PLASTIC |
| 中文描述： | 的ATM / SONET的分路器|雙極|的BGA | 177PIN |塑料 |
| 文件頁(yè)數(shù)： | 16/26頁(yè) |
| 文件大小： | 476K |
| 代理商： | TRCV0110G |
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16
Agere Systems Inc.
Data Sheet
March 28, 2002
Clock Recovery, 1:16 Data Demultiplexer
TRCV0110G 10 Gbits/s Limiting Amplifier
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Table 6. Absolute Maximum Ratings
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Agere Systems employs a human-body model
(HBM) and charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD volt-
age thresholds are dependent on the circuit parameters used in the defined model. No industrywide standard has
been adopted for the CDM. However, a standard HBM (resistance = 1500
, capacitance = 100 pF) is widely used
and, therefore, can be used for comparison purposes.
Table 7. Handling Precautions
Note:
All LVDS, CMOS, and analog pins (except high-speed and ACM) have an ESD HBM threshold of
≥
2,000 V.
Recommended Operating Conditions
Recommended operating conditions apply unless otherwise specified.
Table 8. Recommended Operating Conditions
Parameter
Min
Max
Unit
V
°C
V
Power Supply Voltage
Storage Temperature
Pin Voltage
GND – 0.5
–40
GND – 0.5
V
CC
+ 0.5
125
V
CC
+ 0.5
Device
TRCV0110G
Voltage
≥
100 V
≥
100 V
Type
HBM (human-body model)
CDM (charged-device model)
Parameter
Symbol
V
CC
T
C
Min
3.135
0
Typ
3.30
25
Max
3.465
85
Unit
V
°C
Power Supply Voltage (dc)
Temperature:
Case
Power Dissipation
P
D
—
2.1
2.65
W
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