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參數資料
| 型號： | S29CL032J0RFFN130 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80 |
| 文件頁數： | 69/78頁 |
| 文件大?。?/td> | 1825K |
| 代理商： | S29CL032J0RFFN130 |
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September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
69
Pr el im i n a r y
Table 19.2 CFI System Interface String
Addresses
Data
Description
1Bh
(see description)
VCC Min. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
0023h = S29CD-J devices
0030h = S29CL-J devices
1Ch
(see description)
VCC Max. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
0027h = S29CD-J devices
0036h = S29CL-J devices
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single word/doubleword program 2N s
20h
0000h
Typical timeout for Min. size buffer program 2N s (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0005h
Max. timeout for word/doubleword program 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0007h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 19.3 Device Geometry Definition
Addresses
Data
Description
27h
(see description)
Device Size = 2N byte
0015h = 16 Mb device
0016h = 32 Mb device
28h
29h
0003h
0000h
Flash Device Interface description (for complete description, please refer to CFI
publication 100)
0000 = x8-only asynchronous interface
0001 = x16-only asynchronous interface
0002 = supports x8 and x16 via BYTE# with asynchronous interface
0003 = x 32-only asynchronous interface
0005 = supports x16 and x32 via WORD# with asynchronous interface
2Ah
2Bh
0000h
Max. number of byte in multi-byte program = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
(See description)
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
Address 31h data:
001Dh = 16 Mb device
003Dh = 32 Mb device
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
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相關代理商/技術參數 |
參數描述 |
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| S29GL016A | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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