- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄192296 > S29CL032J0RFFN130 (SPANSION LLC) 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 PDF資料下載
參數(shù)資料
| 型號(hào)： | S29CL032J0RFFN130 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80 |
| 文件頁(yè)數(shù)： | 73/78頁(yè) |
| 文件大小： | 1825K |
| 代理商： | S29CL032J0RFFN130 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)當(dāng)前第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)
September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
73
Pr el im i n a r y
21 Revision Summary
Revision A (March 1, 2005)
Initial release.
Revision A1 (April 15, 2005)
Ordering Information and Valid Combinations tables
Updated to include lead (Pb)-free options
Rev A2 (January 20, 2006)
Ordering Information
Added "Contact factory" for 75 MHz
Modified Ordering Options for Characters 15 & 16 to reflect autoselect ID & top/bottom boot.
Changed “N” for Extended Temperature Range to “M”.
Input/Output Descriptions
Removed Logic Symbol Diagrams
Additional Resources
Added Additional Resources section
Memory Address Map
Changed "Bank 2" to "Bank 1"
Simultaneous Read/Write Operation
Removed Ordering Options Table (Tables 3 & 4)
Advanced Sector Protection/Unprotection
Added Figure: Advanced Sector Protection/Unprotection
Added Figures for PPB Erase & Program Algorithm
Electronic Marking
Added in Electronic Marking section
Absolute Maximum Ratings
Modified VCC Ratings to reflect 2.6 V and 3.6 V devices
Modified VCC Ratings to reflect 16 Mb & 32 Mb devices
AC Characteristics
Added Note "tOE during Read Array"
Table: Asynchronous Read Operation
Changed values of tAVAV, tAVQV, tELQV, tGLQV
Figure: Conventional Read Operation Timings
Moved tDF line to 90% on the high-Z output
Table: Burst Mode Read for 32 Mb & 16 Mb
Added tAAVS and tAAVH timing parameters.
Changed tCH to tCLKH
Changed tCL to tCLKL
Removed the following timing parameters
tDS (Data Setup to WE# Rising Edge)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29CL032J1JFAI110 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J1MFAN120 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0PQAN102 | 1M X 32 FLASH 3.3V PROM, 54 ns, PQFP80 |
| S29GL016A10FAI020 | 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| S29GL032A10TAIR10 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL016A | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI010 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI012 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI013 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAIR10 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。