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| 型號(hào)： | 70V659S15DR |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208 |
| 封裝： | 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 |
| 文件頁(yè)數(shù)： | 13/24頁(yè) |
| 文件大小： | 316K |
| 代理商： | 70V659S15DR |
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IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
20
Busy Logic
BusyLogicprovidesahardwareindicationthatbothportsoftheRAM
haveaccessedthesamelocationatthesametime.Italsoallowsoneofthe
twoaccessestoproceedandsignalstheothersidethattheRAMis“Busy”.
TheBUSYpincanthenbeusedtostalltheaccessuntiltheoperationon
theothersideiscompleted.Ifawriteoperationhasbeenattemptedfrom
thesidethatreceivesaBUSYindication,thewritesignalisgatedinternally
to prevent the write from proceeding.
TheuseofBUSYlogicisnotrequiredordesirableforallapplications.
InsomecasesitmaybeusefultologicallyORtheBUSYoutputstogether
and use any BUSY indication as an interrupt source to flag the event of
anillegalorillogicaloperation.IfthewriteinhibitfunctionofBUSYlogicis
notdesirable,theBUSYlogiccanbedisabledbyplacingthepartinslave
modewiththeM/Spin.OnceinslavemodetheBUSYpinoperatessolely
asawriteinhibitinputpin.Normaloperationcanbeprogrammedbytying
the BUSY pins HIGH. If desired, unintended write operations can be
prevented to a port by tying the BUSY pin for that port LOW.
The BUSY outputs on the IDT70V659/58/57 RAM in master mode,
arepush-pulltypeoutputsanddonotrequirepullupresistorstooperate.
If these RAMs are being expanded in depth, then the BUSY indication
for the resulting array requires the use of an external AND gate.
Iftwoormoremasterpartswereusedwhenexpandinginwidth,asplit
decisioncouldresultwithonemasterindicatingBUSYononesideofthe
array and another master indicating BUSY on one other side of
thearray.Thiswouldinhibitthewriteoperationsfromoneportforpartof
awordandinhibitthewriteoperationsfromtheotherportforthe otherpart
of the word.
The BUSY arbitration on a master is based on the chip enable and
address signals only. It ignores whether an access is a read or write. In
a master/slave array, both address and chip enable must be valid long
enoughforaBUSYflagtobeoutputfromthemasterbeforethe actualwrite
pulsecanbeinitiatedwiththeR/W signal.Failureto observethistiming
canresultinaglitchedinternalwriteinhibitsignalandcorrupteddatainthe
slave.
Semaphores
The IDT70V659/58/57 is an extremely fast Dual-Port 128/64/32K x
36CMOSStaticRAMwithanadditional8addresslocationsdedicatedto
binarysemaphoreflags.Theseflagsalloweitherprocessorontheleftor
right sideoftheDual-PortRAMtoclaimaprivilegeovertheotherprocessor
forfunctionsdefinedbythesystemdesigner’ssoftware.Asanexample,
the semaphore can be used by one processor to inhibit the other from
accessingaportionoftheDual-PortRAMoranyothersharedresource.
TheDual-PortRAMfeaturesafastaccesstime,withbothportsbeing
completelyindependentofeachother.Thismeansthatthe activityonthe
left port in no way slows the access time of the right port. Both ports are
identicalinfunctiontostandardCMOSStaticRAMandcanbereadfrom
orwrittentoatthesametimewiththeonlypossibleconflictarisingfromthe
simultaneous writing of, or a simultaneous READ/WRITE of, a non-
semaphorelocation.Semaphoresareprotectedagainstsuchambiguous
situationsandmaybeusedbythesystemprogramtoavoidanyconflicts
inthenon-semaphoreportionoftheDual-PortRAM.Thesedeviceshave
anautomaticpower-downfeaturecontrolledbyCE,theDual-PortRAM
enable,andSEM,thesemaphoreenable.TheCEandSEMpinscontrol
on-chip power down circuitry that permits the respective port to go into
standbymodewhennotselected.
SystemswhichcanbestusetheIDT70V659/58/57containmultiple
processors or controllers and are typically very high-speed systems
which are software controlled or software intensive. These systems
canbenefitfromaperformanceincreaseofferedbytheIDT70V659/58/
57shardwaresemaphores,whichprovidealockoutmechanismwithout
requiringcomplexprogramming.
Software handshaking between processors offers the maximum in
systemflexibilitybypermittingsharedresourcestobeallocatedinvarying
configurations. The IDT70V659/58/57 does not use its semaphore
flagstocontrolanyresourcesthroughhardware,thusallowingthesystem
designertotalflexibilityinsystemarchitecture.
An advantage of using semaphores rather than the more common
methodsofhardwarearbitrationisthatwaitstatesareneverincurredin
either processor. This can prove to be a major advantage in very high-
speedsystems.
4869 drw 18
MASTER
Dual Port RAM
BUSYR
CE0
MASTER
Dual Port RAM
BUSYR
SLAVE
Dual Port RAM
BUSYR
SLAVE
Dual Port RAM
BUSYR
CE1
CE0
A17(1,2)
BUSYL
.
a"don'tcare".Likewise,therightportinterruptflag(INTR)isassertedwhen
theleftportwritestomemorylocation1FFFF(HEX)(FFFFforIDT70V658
and7FFFforIDT70V657)andtocleartheinterruptflag(INTR),theright
port must read the memory location 1FFFF (FFFF for IDT70V658 and
7FFF for IDT70V657). The message (36 bits) at 1FFFE (FFFE for
IDT70V658 and 7FFE for IDT70V657)or 1FFFF (FFFF for IDT70V658
and 7FFF for IDT70V657) is user-defined since it is an addressable
SRAM location. If the interrupt function is not used, address locations
1FFFE (FFFE for IDT70V658 and 7FFE for IDT70V657) and 1FFFF
(FFFF for IDT70V658 and 7FFF for IDT70V657) are not used as mail
boxes,butaspartoftherandomaccessmemory.RefertoTruthTableIII
fortheinterruptoperation.
Width Expansion with Busy Logic
Master/Slave Arrays
When expanding an IDT70V659/58/57 RAM array in width while
usingBUSYlogic,onemasterpartisusedtodecidewhichsideoftheRAMs
array will receive a BUSY indication, and to output that indication. Any
Figure 3. Busy and chip enable routing for both width and depth
expansion with IDT70V659/58/57 RAMs.
numberofslavestobeaddressedinthesameaddressrangeasthemaster
usetheBUSYsignalasawriteinhibitsignal.ThusontheIDT70V659/58/
57RAMtheBUSYpinisanoutputifthepartisusedasamaster(M/Spin
= VIH), and the BUSY pin is an input if the part used as a slave (M/S pin
= VIL) as shown in Figure 3.
NOTES:
1. A16 for IDT70V658.
2. A15 for IDT70V657.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 70V659S15DRI | 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 4.5MBIT 128KX36 15NS 208PQFP - Bulk |
| 70V7319S133BC | 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電壓 - 電源:3.15 V ~ 3.45 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:256-LBGA 供應(yīng)商器件封裝:256-CABGA（17x17） 標(biāo)準(zhǔn)包裝:6 |
| 70V7319S133BC8 | 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA 制造商:idt, integrated device technology inc 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電壓 - 電源:3.15 V ~ 3.45 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:256-LBGA 供應(yīng)商器件封裝:256-CABGA（17x17） 標(biāo)準(zhǔn)包裝:1,000 |
| 70V7319S133BF | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:IDT 存儲(chǔ)容量: 組織: 訪問(wèn)時(shí)間: 電源電壓-最大: 電源電壓-最小: 最大工作電流: 最大工作溫度: 最小工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝: |
| 70V7319S133BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4.5MBIT 256KX18 15NS/4.2NS 208FBGA - Tape and Reel |
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