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參數(shù)資料
| 型號： | 70V659S15DR |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208 |
| 封裝： | 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 |
| 文件頁數(shù)： | 7/24頁 |
| 文件大小： | 316K |
| 代理商： | 70V659S15DR |
15
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/S = VIH)".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of the Max. spec, tWDD – tWP (actual), or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
Symbol
Parameter
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
Unit
Min.
Max.
Min.
Max.
Min.
Max.
BUSY
TIMING (M/S=VIH)
tBAA
BUSY
Access Time from Address Match
____
10
____
12
____
15
ns
tBDA
BUSY
Disable Time from Address Not Matched
____
10
____
12
____
15
ns
tBAC
BUSY
Access Time from Chip Enable Low
____
10
____
12
____
15
ns
tBDC
BUSY
Disable Time from Chip Enable High
____
10
____
12
____
15
ns
tAPS
Arbitration Priority Set-up Time(2)
5
____
5
____
5
____
ns
tBDD
BUSY
Disable to Valid Data(3)
____
10
____
12
____
15
ns
tWH
Write Hold After BUSY(5)
8
____
10
____
12
____
ns
BUSY
TIMING (M/S=VIL)
tWB
BUSY
Input to Write(4)
0
____
0
____
0
____
ns
tWH
Write Hold After BUSY(5)
8
____
10
____
12
____
ns
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay(1)
____
22
____
25
____
30
ns
tDDD
Write Data Valid to Read Data Delay(1)
____
20
____
22
____
25
ns
4869 tbl 14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 70V659S15DRI | 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 4.5MBIT 128KX36 15NS 208PQFP - Bulk |
| 70V7319S133BC | 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電壓 - 電源:3.15 V ~ 3.45 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:256-LBGA 供應(yīng)商器件封裝:256-CABGA（17x17） 標(biāo)準(zhǔn)包裝:6 |
| 70V7319S133BC8 | 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA 制造商:idt, integrated device technology inc 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電壓 - 電源:3.15 V ~ 3.45 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:256-LBGA 供應(yīng)商器件封裝:256-CABGA（17x17） 標(biāo)準(zhǔn)包裝:1,000 |
| 70V7319S133BF | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:IDT 存儲容量: 組織: 訪問時間: 電源電壓-最大: 電源電壓-最小: 最大工作電流: 最大工作溫度: 最小工作溫度: 安裝風(fēng)格: 封裝 / 箱體: 封裝: |
| 70V7319S133BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 3.3V 4.5MBIT 256KX18 15NS/4.2NS 208FBGA - Tape and Reel |
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