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參數(shù)資料
| 型號： | N643GT7MI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 10/49頁 |
| 文件大小： | 382K |
| 代理商： | N643GT7MI |
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8
Am29BDS643G
25692A2 May 8, 2006
D A T A S H E E T
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Valid Combinations
Valid Combination configuration planned to be supported for this
device.
Am29BDS643G
T
5
K
VA
I
TEMPERATURE RANGE
I
=
Industrial (–40
°
C to +85
°
C)
PACKAGE TYPE
VA
=
44-Ball Very Thin Fine-Pitch Grid Array (FBGA)
0.5 mm pitch, 9.2 x 8.0 mm package (VDA044)
CLOCK RATE AND HANDSHAKING
G
=
40 MHz with handshaking
M
=
54 MHz with handshaking
K
=
66 MHz with handshaking
ASYNCHRONOUS SPEED OPTIONS
7
=
70 ns asynchronous read access
5
=
55 ns asynchronous read access
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
DEVICE NUMBER/DESCRIPTION
Am29BDS643G
64 Megabit (4 M x 16-Bit) CMOS Flash Memory, Simultaneous Read/Write, Burst Mode Flash Memory
1.8 Volt-only Read, Program, and Erase
Valid Combinations
Order Number
Package Marking
Am29BDS643GT7GVAI
N643GT7GI
Am29BDS643GT7MVAI
N643GT7MI
Am29BDS643GT5KVAI
N643GT5KI
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參數(shù)描述 |
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