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參數資料
| 型號： | N643GT7MI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發模式閃存 |
| 文件頁數： | 43/49頁 |
| 文件大小： | 382K |
| 代理商： | N643GT7MI |
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May 8, 2006 25692A2
Am29BDS643G
41
D A T A S H E E T
AC CHARACTERISTICS
Notes:
1. All status reads are asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete,
and Data# Polling will output true data.
Figure 16.
Data# Polling Timings (During Embedded Algorithm)
Notes:
1. All status reads are asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete,
the toggle bits will stop toggling.
Figure 17.
Toggle Bit Timings (During Embedded Algorithm)
WE#
CE#
OE#
t
OE
A16:A21
A/DQ0:
A/DQ15
AVD
t
OEH
t
CE
t
CH
t
OEZ
t
CEZ
Status Data
Status Data
t
ACC
VA
VA
VA
VA
WE#
CE#
OE#
t
OE
A16:A21
A/DQ0:
A/DQ15
AVD
t
OEH
t
CE
t
CH
t
OEZ
t
CEZ
Status Data
Status Data
t
ACC
VA
VA
VA
VA
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