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參數資料
| 型號： | N643GT7MI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發模式閃存 |
| 文件頁數： | 39/49頁 |
| 文件大小： | 382K |
| 代理商： | N643GT7MI |
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May 8, 2006 25692A2
Am29BDS643G
37
D A T A S H E E T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. Does not include the preprogramming time.
Parameter
Description
7G/7M
5K
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
80
45
ns
t
AVWL
t
AS
Address Setup Time
Min
5
4
ns
t
WLAX
t
AH
Address Hold Time
Min
7
6
ns
t
AVDP
AVD# Low Time
Min
12
11
ns
t
DVWH
t
DS
Data Setup Time
Min
45
25
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
Typ
0
ns
t
ELWL
t
CS
CE# Setup Time
Typ
0
ns
t
WHEH
t
CH
CE# Hold Time
Typ
0
ns
t
WLWH
t
WP
/t
WRL
Write Pulse Width
Typ
50
25
ns
t
WHWL
t
WPH
Write Pulse Width High
Typ
30
20
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
11.5
μs
t
WHWH1
t
WHWH1
Accelerated Programming Operation (Note 2)
Typ
4
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Notes 2, 3)
Typ
0.4
sec
t
VPP
V
PP
Rise and Fall Time
Min
500
ns
t
VPS
V
PP
Setup Time (During Accelerated Programming)
Min
1
μs
t
VCS
V
CC
Setup Time
Min
50
μs
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