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參數資料
| 型號： | N643GT7MI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發模式閃存 |
| 文件頁數： | 46/49頁 |
| 文件大小： | 382K |
| 代理商： | N643GT7MI |
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44
Am29BDS643G
25692A2 May 8, 2006
D A T A S H E E T
AC CHARACTERISTICS
Note:
Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking
the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure valid information.
Figure 22.
Back-to-Back Read/Write Cycle Timings
OE#
CE#
WE#
t
OEH
A/DQ0:
A/DQ15
A16:
A21
AVD#
PD/30h
PA/SA
AAh
555h
RA
PA/SA
t
WC
t
DS
t
DH
t
RC
t
RC
t
OE
t
OEH
t
AS
t
AH
t
ACC
t
WP
t
GHWL
t
OEZ
t
WC
t
SR/W
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
Begin another
write or program
command sequence
RD
RA
RA
RA
RD
t
WPH
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