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參數資料
| 型號： | N643GT7MI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發模式閃存 |
| 文件頁數： | 47/49頁 |
| 文件大小： | 382K |
| 代理商： | N643GT7MI |
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May 8, 2006 25692A2
Am29BDS643G
45
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 1.8 V V
CC
, 1 million cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 1.8 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 10 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
32 Kword
0.4
5
s
Excludes 00h programming
prior to erasure (Note 4)
8 Kword
0.4
5
Chip Erase Time
54
s
Word Programming Time
11.5
210
μs
Excludes system level
overhead (Note 5)
Accelerated Word Programming Time
4
120
μs
Chip Programming Time (Note 3)
48
144
s
Excludes system level
overhead (Note 5)
Accelerated Chip Programming Time
16
48
s
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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