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| 型號： | N643GT7MI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 34/49頁 |
| 文件大小： | 382K |
| 代理商： | N643GT7MI |
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32
Am29BDS643G
25692A2 May 8, 2006
D A T A S H E E T
TEST CONDITIONS
Table 13.
Test Specifications
KEY TO SWITCHING WAVEFORMS
SWITCHING WAVEFORMS
C
L
Device
Under
Test
Figure 7.
Test Setup
Test Condition
All Speeds
Unit
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–V
CC
V
Input timing measurement
reference levels
V
CC
/2
V
Output timing measurement
reference levels
V
CC
/2
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
V
CC
0.0 V
Output
Measurement Level
Input
V
CC
/2
V
CC
/2
Figure 8.
Input Waveforms and
Measurement Levels
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