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| 型號： | N643GT7MI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 64兆位（4個M x 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 44/49頁 |
| 文件大小： | 382K |
| 代理商： | N643GT7MI |
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42
Am29BDS643G
25692A2 May 8, 2006
D A T A S H E E T
AC CHARACTERISTICS
Note:
8-word linear burst mode shown. 16- and 32-word linear burst read modes behave similarly.
Figure 18.
8-, 16-, and 32-Word Linear Burst
Address Wrap Around
Note:
Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60.
Figure 19.
Latency with Boundary Crossing (54 MHz and 66 MHz)
CLK
Address (hex)
D0
D1
D2
A/DQ0:
A/DQ15
OE#,
CE#
Address wraps back to beginning of address group.
39
39
3A
3B
3C
3D
3E
3F
38
Initial Access
V
IL
V
IH
AVD#
V
IL
V
IH
D3
D4
D5
D6
D7
CLK
Address (hex)
C59
C60
C61
C62
C62
C62
C63
C64
C65
C66
D59
D60
D61
D62
D63
D64
D65
D66
(stays high)
AVD#
RDY
A/DQ0:
A/DQ15
OE#,
CE#
(stays low)
Address boundary occurs every 64 words, beginning at address
00003Eh: 00007Eh, 0000BEh, etc. Address 000000h is also a boundary crossing.
3B
3C
3D
3E
3E
3E
3F
40
41
42
latency
t
RACC
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