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參數資料
| 型號： | MC68B912B32 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 2.5V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125 |
| 中文描述： | 16位微控制器 |
| 文件頁數： | 49/128頁 |
| 文件大小： | 748K |
| 代理商： | MC68B912B32 |
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MC68HC912B32
MC68HC912B32TS/D
MOTOROLA
49
BPROT[4:0]
— EEPROM Block Protection
0 = Associated EEPROM block can be programmed and erased.
1 = Associated EEPROM block is protected from being programmed and erased.
Cannot be modified while programming is taking place (EEPGM = 1).
Read anytime. Write in special modes only (SMODN = 0). These bits are used for test purposes only.
In normal modes the bits are forced to zero.
EEODD — Odd Row Programming
0 = Odd row bulk programming/erasing is disabled.
1 = Bulk program/erase all odd rows.
Refers to a physical location in the array rather than an odd byte address.
EEVEN — Even Row Programming
0 = Even row bulk programming/erasing is disabled.
1 = Bulk program/erase all even rows.
Refers to a physical location in the array rather than an even byte address.
MARG — Program and Erase Voltage Margin Test Enable
0 = Normal operation.
1 = Program and erase margin test.
This bit is used to evaluate the program/erase voltage margin.
EECPD — Charge Pump Disable
0 = Charge pump is turned on during program/erase.
1 = Disable charge pump.
EECPRD — Charge Pump Ramp Disable
Known to enhance write/erase endurance of EEPROM cells.
0 = Charge pump is turned on progressively during program/erase.
1 = Disable charge pump controlled ramp up.
EECPM — Charge Pump Monitor Enable
0 = Normal operation.
1 = Output the charge pump voltage on the IRQ/V
PP
pin.
Table 15 768-Byte EEPROM Block Protection
Bit Name
BPROT4
BPROT3
BPROT2
BPROT1
BPROT0
Block Protected
$0D00 to $0DFF
$0E00 to $0EFF
$0F00 to $0F7F
$0F80 to $0FBF
$0FC0 to $0FFF
Block Size
256 Bytes
256 Bytes
128 Bytes
64 Bytes
64 Bytes
EETST
— EEPROM Test
$00F2
Bit 7
6
5
4
3
2
1
Bit 0
EEODD
EEVEN
MARG
EECPD
EECPRD
0
EECPM
0
RESET:
0
0
0
0
0
0
0
0
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